Full PDF Text Transcription for MJE16106 (Reference)
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MJE16106. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE16106/D Designer's NPN Silicon Power Transistor Switchmode Bridge Series • • • • • • . . . specifically de...
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Transistor Switchmode Bridge Series • • • • • • . . . specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V Collector–Emitter Breakdown — V(BR)CES — 650 V State–of–Art Bipolar Power Transistor Design Fast Inductive Switching: tfi = 30 ns (Typ) @ 100_C tc = 65 ns (Typ) @ 100_C tsv = 1.
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MJE16106 Datasheet
