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MJE1123 - Bipolar Power PNP Transistor

Key Features

  • High Gain Limits Base.
  • Drive Losses to only 1.
  • 2% of Circuit Output Current.
  • Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts.
  • Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MJE105 5 Ampere Power Transistor
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MJE13007 POWER TRANSISTOR
MJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR
MJE1320 POWER TRANSISTOR
mje15028 8 AMPERE POWER TRANSISTORS
MJE15029 8 AMPERE POWER TRANSISTORS
MJE15030 8 AMPERE POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE1123/D Bipolar Power PNP Low Dropout Regulator Transistor The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specified in the saturation region and exhibits the following main features: • High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current • Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts • Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.