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MHW6185B - High Ouput Doubler 450/550 MHz CATV Amplifier Modules

Key Features

  • ion.
  • implanted arsenic emitter transistors and an all gold metallization system.
  • 5th Generation Die Technology.
  • Specified for 60/77.
  • Channel Performance.
  • Broadband Power Gain.
  • @ f = 40.
  • 550 MHz Gp = 18.5 dB Typ @ 50 MHz Gp = 19.2 dB Typ @ 450 MHz Gp = 19.5 dB Typ @ 550 MHz.
  • Broadband Noise Figure NF = 4.5 dB Typ @ 50 MHz.
  • Improvement in Distortion Over Conventional Hybrids.
  • Allows Higher Output Level Operation.

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Full PDF Text Transcription for MHW6185B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MHW6185B. For precise diagrams, and layout, please refer to the original PDF.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW5185B/D The RF Line High Output Doubler 450/550 MHz CATV Amplifier Modules The MHW5185B and MHW6185B are d...

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ler 450/550 MHz CATV Amplifier Modules The MHW5185B and MHW6185B are designed specifically for 450/550 MHz CATV applications. Features ion–implanted arsenic emitter transistors and an all gold metallization system. • 5th Generation Die Technology • Specified for 60/77–Channel Performance • Broadband Power Gain — @ f = 40 – 550 MHz Gp = 18.5 dB Typ @ 50 MHz Gp = 19.2 dB Typ @ 450 MHz Gp = 19.5 dB Typ @ 550 MHz • Broadband Noise Figure NF = 4.

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