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MHW6182-6 - 600 MHz CATV Amplifier Module

Key Features

  • ion.
  • implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system.
  • Specified for 87.
  • Channel Performance.
  • Broadband Power Gain.
  • @ f = 40.
  • 600 MHz Gp = 17.6 dB (Min) @ 50 MHz Gp = 18.2 dB (Min) @ 600 MHz.
  • Broadband Noise Figure @ 600 MHz NF = 6 dB (Max).
  • Superior Gain, Return Loss and DC Current Stability with Temperature.
  • All Gold Metallization.
  • 7 GHz Ion.
  • Implanted Transistor.

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Full PDF Text Transcription for MHW6182-6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MHW6182-6. For precise diagrams, and layout, please refer to the original PDF.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW6182–6/D The RF Line 600 MHz CATV Amplifier Module This module is designed specifically for 600 MHz CATV a...

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plifier Module This module is designed specifically for 600 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. • Specified for 87–Channel Performance • Broadband Power Gain — @ f = 40– 600 MHz Gp = 17.6 dB (Min) @ 50 MHz Gp = 18.

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