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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by J308/D
JFET VHF/UHF Amplifiers
J308
1 DRAIN
N–Channel — Depletion
3 GATE
J309 J310
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 – 65 to +125 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA)
1 2 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage (IG = –1.