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2N744 - NPN silicon annular transistor

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2N744 (SILICON) CASE 22 (TO-18) Collector connected to case NPN silicon annular transistor for high-speed switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage. Emitter-Base Voltage Collector DC Current Total Device Dissipation at 25°C Case Temperature (Derate 6.67 mW/"C above 25·C) Total Device Dissipation at 25°C Ambient Temperature Derate above 25°C Junction Temperature Storage Temperature Symbol VCB VCEO VEB IC PD PD TJ Tl:Itg "Refers to the 'voltage at which the'magnitude of hFE a:pproaches one when the emitter-base diode is open-circuited. Value 20 12* 5.0 200 1.0 Unit Vdc Vdc Vdc mAdc Watt 0.3 2.
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