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2N740 - NPN silicon annular transistors

Download the 2N740 datasheet PDF. This datasheet also covers the 2N735 variant, as both devices belong to the same npn silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N735-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N7400 N-Channel Power MOSFET Intersil Corporation
2N7424 P-Channel Transistor ETC
2N7425 P-Channel Transistor ETC
2N7426 P-Channel Transistor ETC
2N70 N-CHANNEL POWER MOSFET UTC

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N741 PNP germanium mesa transistors
2N741A PNP germanium mesa transistors
2N743 NPN silicon annular transistor
2N744 NPN silicon annular transistor
2N700 PNP Transistor

Full PDF Text Transcription

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2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-E':mitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N735 2N73g 2N736 2N740 V CEO VCB VEB IC PD TJ' Tstg 60 80 80 125 5.0 1.0 500 2.86 -65 to +200 Lead Temperature, 1/16" ± 1/32" froIn case for 10 s.
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