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2N3818 - NPN SILICON RF POWER TRANSISTOR

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2N3818 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR . designed for applications to 150 MHz. • High Collector-Emitter Sustaining VoltageVCE(sus) ~ 80 Vdc (Min) • Power Output Pout ~ 15 Watts at 100 MHz • Power Gain GPE ~ 7.0 dB (Typ) at 100 MHz with 15 Watts RF Power Output 15 W -100 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS INote 11 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current - Continuous Total Device Dissipation@Tc '" 25°C Derate above 25°C Operating and Storage Junction Temperature Range Power Input (Nominal) Power Output (Nominal) Svmbol VCES VCB VEB Ie IB PD TJ.Tstg Pin Pout Value 60 60 4.0 2.0 1.0 25 167 -65 to +175 5.0 20 Unit Vde Vde Vde Ade mAde Watts mW/oC °e Watts Watts Note 1.
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