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2N3289 - NPN silicon annular transistors

Download the 2N3289 datasheet PDF. This datasheet also covers the 2N3287 variant, as both devices belong to the same npn silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3287-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3280 PNP germanium epitaxial mesa transistors
2N3281 PNP germanium epitaxial mesa transistors
2N3282 PNP germanium epitaxial mesa transistors
2N3283 PNP germanium epitaxial mesa transistors
2N3284 PNP germanium epitaxial mesa transistors

Full PDF Text Transcription

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2N3287 thru 2N3290 (SILICON) CASE 20 (TO·72) NPN silicon annular transistors for high-gain, lownoise amplifier, oscillator, mixer and frequency multiplier applications. MAXIMUM RATINGS Rating Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Symbol VCB VCES VCEO VEB IC 2N3287 2N3288 40 40 20 3.0 50 2N3289 2N3290 30 30 15 3.0 50 Unit Volts Volts Volts Volts rnA Power Dissipation at 25°C Case PD Above 25°C derate 1. 71 mW/oC Power Dissipation at 25° C ambo PD Above 25°C derate 1.
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