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2N3281 - PNP germanium epitaxial mesa transistors

Download the 2N3281 datasheet PDF. This datasheet also covers the 2N3279 variant, as both devices belong to the same pnp germanium epitaxial mesa transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3279-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3280 PNP germanium epitaxial mesa transistors
2N3282 PNP germanium epitaxial mesa transistors
2N3283 PNP germanium epitaxial mesa transistors
2N3284 PNP germanium epitaxial mesa transistors
2N3285 PNP germanium epitaxial mesa transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3279 thru 2N3282 (GERMANIUM) CASE 20 (10·72) PNP germanium epitaxial mesa transistors for highgain, low-noise amplifier, oscillator, mixer and frequency multiplier applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25° C Derate above 25°C Ope-rating and Storage Junction Temperature Range Symbol VCEO VCES VCB VEB IC PD TJ , Tstg 2N3279 2N3280 20 2N3281 2N3282 15 30 30 1.0 0.5 50 100 1. 33 -65 to +100 Unit Vdc Vdc Vdc mAdc mW mW/oC °c POWER GAIN AND NOISE FIGURE Jersus COllECTOR CURRENT _MHz 25 ~ 20 1-::;;_=f!5e;!!";:;:;;l~~lb~~~ i 15~~~~~-4~~-4~~~~~~ i 10 f J Ii 46 I..
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