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TPV8100B - NPN SILICON RF POWER TRANSISTOR

Key Features

  • high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit.
  • To be used class AB for TV band IV and V.
  • Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync. ) Output Power = 100 Watts (CW) Minimum Gain = 8.5 dB.
  • Specified 32 Volts, 860 MHz Characteristics Output Power = 150 Watts (peak sync. ).
  • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoe.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8100B/D NPN Silicon RF Power Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit. • To be used class AB for TV band IV and V. • Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum Gain = 8.5 dB • Specified 32 Volts, 860 MHz Characteristics Output Power = 150 Watts (peak sync.