The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPV8100B TPV8100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV8100 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
• Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting
PACKAGE STYLE .438X.450 4LFL
MAXIMUM RATINGS
IC VCER PDISS TJ TSTG θJC 12 A 40 V RBE = 10 Ω 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W
O O O O O O
1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (COMMON)
CHARACTERISTICS
SYMBOL
BVCER BVCBO BVEBO ICER hFE Gp η Pout IC = 10 mA IC = 20 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V
TC = 25 C
O
TEST CONDITIONS
RBE = 75 Ω
MINIMUM TYPICAL MAXIMUM
30 65 4.0
UNITS
V V V
RBE = 75 Ω IC = 2.
TPV8100 Datasheet
