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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSV52LT1/D
Switching Transistor
NPN Silicon
1 BASE
COLLECTOR 3
BSV52LT1
2 EMITTER
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Collector Current — Continuous Symbol VCEO VCBO IC Value 12 20 100 Unit Vdc Vdc mAdc
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.
BSV52LT1 Datasheet
