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PN7106 - High and Low Side Driver

Datasheet Summary

Description

The PN7106A/B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process.

Features

  • z Fully operational to +600 V z 3.3 V logic compatible z dV/dt Immunity ±50 V/nsec z Floating channel designed for bootstrap operation z Gate drive supply range from 10 V to 20 V z UVLO for both channels z Output Source / Sink Current Capability 400mA / 800mA z Independent Logic Inputs to Accommodate All Topologies (Version A) z Cross Conduction Protection with 180 ns Internal Fixed Dead Time (Version B) z -5V negative Vs ability z Matched propagation delay for both channels.

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Datasheet Details

Part number PN7106
Manufacturer Mosway
File Size 366.73 KB
Description High and Low Side Driver
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PN7106 High and Low Side Driver General Description The PN7106A/B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration (version B) or any other high-side& low-side configuration (version A) which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Features z Fully operational to +600 V z 3.
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