Datasheet4U Logo Datasheet4U.com

PN7103 - Half-Bridge Driver

Datasheet Summary

Description

The PN7103 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process.

The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V.

Features

  • z Fully operational to +600 V z 3.3 V logic compatible z dV/dt Immunity ±50 V/nsec z Floating channel designed for bootstrap operation z Gate drive supply range from 10 V to 20 V z UVLO for low side channel z Output Source / Sink Current Capability 300 mA / 600mA z -5V negative Vs ability z Matched propagation delay for both channels.

📥 Download Datasheet

Datasheet preview – PN7103

Datasheet Details

Part number PN7103
Manufacturer Mosway
File Size 359.53 KB
Description Half-Bridge Driver
Datasheet download datasheet PN7103 Datasheet
Additional preview pages of the PN7103 datasheet.

📁 Similar Datasheet

  • PN7103 - High and Low Side Driver (Chipown)
  • PN7101 - High and Low Side Driver (Chipown)
  • PN7106A - High and Low Side Driver (Chipown)
  • PN7106B - High and Low Side Driver (Chipown)
  • PN7113 - High and Low Side Driver (Chipown)
  • PN7120 - NFC controller (NXP)
  • PN7150 - High performance NFC controller (NXP)
  • PN7160 - NFC controller (NXP)
  • PN7161 - NFC controller (NXP)
  • PN7001L - Single channel low side gate driver (Chipown)
Other Datasheets by Mosway
  • PN7106 - High and Low Side Driver
  • PN7106A - High and Low Side Driver
  • PN7106B - High and Low Side Driver

Full PDF Text Transcription

Click to expand full text
PN7103 Half-Bridge Driver General Description The PN7103 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Features z Fully operational to +600 V z 3.
Published: |