Datasheet4U Logo Datasheet4U.com

V29LC51002 - 2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY

General Description

PRELIMINARY

Key Features

  • s s s s s 256Kx8-bit Organization Address Access Time: 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 512 bytes per Sector, 512 Sectors.
  • Sector-Erase Cycle Time: 10ms (Max).
  • Byte-Write Cycle Time: 30µs (Max) Minimum 1,000 Erase-Program Cycles Low power dissipation.
  • Active Read Current: 20mA (Typ).
  • Active Program Current: 30mA (Typ).
  • Standby Current: 100µA (Max) Low VCC Program Inhibit Below 3.5V CMOS and TTL Interface Packages:.

📥 Download Datasheet

Datasheet Details

Part number V29LC51002
Manufacturer Mosel Vitelic Corp
File Size 52.84 KB
Description 2 MEGABIT 262/144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
Datasheet download datasheet V29LC51002 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
V290BJ1-LE1 TFT LCD Module CHIMEI Innolux
V290BJ1-PE1 TFT LCD Module CHIMEI Innolux
V295ME01 Voltage-Controlled Oscillator Z-Communications
V296W1-L01 LCD_Module CHIMEI
V296W1-L02 TFT LCD Module CHI MEI

Other Datasheets by Mosel Vitelic Corp

Part Number Description
V29LC51000 512 KILOBIT 65/536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
V29LC51001 1 MEGABIT 131/072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
V29C31004B 4 MEGABIT 524/288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY
V29C31004T 4 MEGABIT 524/288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY
V29C51000B 512K BIT 65/536 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSEL VITELIC V29LC51002 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s 256Kx8-bit Organization Address Access Time: 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 30µs (Max) Minimum 1,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Low VCC Program Inhibit Below 3.5V CMOS and TTL Interface Packages: – 32-pin Plastic DIP – 32-pin PLCC s s The V29LC51002 is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply.