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RD70HVF1 - Silicon MOSFET Power Transistor

Description

RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.

Features

  • High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band 24.0+/-0.6 2 10.0+/-0.3 9.6+/-0.3 3 R1.6+/-0.15 0.1 -0.01 4.5+/-0.7 6.2+/-0.7 +0.05.

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Part Number Description
RD70HHF1 Silicon MOSFET Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HVF1 DRAWING 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. OUTLINE 4-C2 FEATURES High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band 24.0+/-0.6 2 10.0+/-0.3 9.6+/-0.3 3 R1.6+/-0.15 0.1 -0.01 4.5+/-0.7 6.2+/-0.7 +0.05 APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 RD70HVF1-101 is a RoHS compliant products.
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