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RD70HHF1 - Silicon MOSFET Power Transistor

Description

RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 2 10.0+/-0.3

Features

  • 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7.

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Other Datasheets by Mitsubishi Electric

Part Number Description
RD70HVF1 Silicon MOSFET Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HHF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 Silicon MOSFET Power Transistor 30MHz,70W DESCRIPTION RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 •High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz •High Efficiency: 60%typ.on HF Band 2 10.0+/-0.3 FEATURES 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.
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