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M54587P - 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

General Description

M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays.

The circuits are made of PNP and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (IC(max) = 500mA) q “L” active level input q With input diode q With clamping diodes q Wide operating temperature range (Ta =.
  • 20 to +75° C) IN6 IN7 IN8 GND 20P4(P) Package type 20P2N-A(FP).

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Full PDF Text Transcription for M54587P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M54587P. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collec...

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CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

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