Datasheet4U Logo Datasheet4U.com

RA08N1317M - RoHS Compliance

General Description

The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V).
  • Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW.
  • ηT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW.
  • Broadband Frequency Range: 135-175MHz www. DataSheet4U. com.
  • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
  • Module Size: 30 x 10 x 5.4 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RA08H1317M Silicon RF Power Modules Mitsubishi Electric Semiconductor
RA0086 80-CH Segment/Common Driver RAiO
RA03M8087M SILICON MOS FET POWER AMPLIFIER Mitsubishi Electric Semiconductor
RA0512J Full Frame CCD Imager EG&G Reticon
RA07H0608M MITSUBISHI RF MOSFET MODULE Mitsubishi Electric Semiconductor

Other Datasheets by Mitsubishi Electric

Part Number Description
RA02M8087MD RoHS Compliance
RA03M8087M SILICON MOS FET POWER AMPLIFIER
RA03M8894M 2 Stage Amp
RA07H3340M RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO
RA07H4452M RoHS Compliance

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.