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RA80H1415M1 - Silicon RF Power Modules

Description

The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

The output power and drain current increase as the gate voltage increases.

Features

  • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V).
  • Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 136-174MHz.
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V.
  • Module Size: 67 x 19.4 x 9.9 mm BLOCK.

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< Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
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