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MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE INSULATED TYPE
A B F G E H E H G E S K R 4 - Mounting Holes
L GuP EuP GvP EvP
D C
GwP EwP GuN EuN GvN EvN
TC Measured Point
u v
TC Measured M Point GwN EwN
w
N 5 - M5 NUTS E H J E J H E
K
TAB#110 t=0.5
P Q
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.