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CM75TU-12H - IGBT Module

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM75TU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E H G E R S(4 - Mounting Holes) K L GuP EuP D GvP EvP GwP EwP GuN EuN GvN EvN u v w K J E 5 - M4 NUTS TAB#110 t=0.5 H E J H E N C TC Measured Point TC Measured Point M GwN EwN P Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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