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27.0-33.0 GHz GaAs MMIC Power Amplifier
March 2007 - Rev 27-Mar-07
P1027-BD Chip Device Layout
Features
Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
XP1027-BD
General Description
Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.