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XP1024-BD - GaAs MMIC Power Amplifier

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 1700 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF TAble4 MTTF Table 4 (4) Channel temperature affects a dev

Features

  • Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to achieve good output return loss and an on-chip.

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Datasheet Details

Part number XP1024-BD
Manufacturer Mimix Broadband
File Size 241.26 KB
Description GaAs MMIC Power Amplifier
Datasheet download datasheet XP1024-BD Datasheet

Full PDF Text Transcription

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26.0-31.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1024-BD Chip Device Layout XP1024-BD Features Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to achieve good output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s 0.
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