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17.0-24.0 GHz GaAs MMIC Power Amplifier
July 2006 - Rev 30-Jul-06
P1019-BD Chip Device Layout
Features
Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s three stage 17.0-24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
XP1019-BD Datasheet
