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MS2473 - high power COMMON BASE bipolar transistor

General Description

The MS2473 is a high power COMMON BASE bipolar transistor.

It is designed for pulsed systems in the 1090MHz frequency band.

The device has gold thin-film metallization for proven highest MTTF.

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Full PDF Text Transcription for MS2473 (Reference)

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MS2473 600 Watts, 50 Volts, Pulsed Avionics 1090 MHz GENERAL DESCRIPTION The MS2473 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in t...

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COMMON BASE bipolar transistor. It is designed for pulsed systems in the 1090MHz frequency band. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance www.DataSheet4U.com packaging reduces the junction temperature and extends device lifetime. CASE OUTLINE M112 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVcbo Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 2300 Watts 65 Volts 3.