The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.
The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Full PDF Text Transcription for MS2213 (Reference)
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MS2213. For precise diagrams, and layout, please refer to the original PDF.
5) 631-9855 MS2213 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS Features • • • • • • • • REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB Gain DESCRIPTION: The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
More Datasheets from Microsemi (now Microchip Technology)
MS2213 Datasheet
