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SLW80R500SJ - N-Channel MOSFET

Description

theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0.

Vsch,paRerDgcSe(oi(na)ttlyylppy.

Features

  • -11A, 800V, RDS(on) typ. = 0.46Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 13nC) D G D S TO-247 G D S TO-3P G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLH80R500SJ/SLW80R500SJ VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100.

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Datasheet Details

Part number SLW80R500SJ
Manufacturer Maple Semiconductor
File Size 1.02 MB
Description N-Channel MOSFET
Datasheet download datasheet SLW80R500SJ Datasheet

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Full PDF Text Transcription

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SLH80R500SJ/SLW80R500SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLH80R500SJ/SLW80R500SJ 800V N-Channel MOSFET Features -11A, 800V, RDS(on) typ.= 0.
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