Datasheet Details
| Part number | SLW20N50C |
|---|---|
| Manufacturer | SL SEMI |
| File Size | 742.88 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SLW20N50C Datasheet
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Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V.
- Low gate charge ( typical 70nC).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche En.