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SLW60R080SS - N-Channel MOSFET

Description

technology.

typ.

Features

  • - 47A, 600V, RDS(on) typ. = 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source V.

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Datasheet Details

Part number SLW60R080SS
Manufacturer Maple Semiconductor
File Size 612.45 KB
Description N-Channel MOSFET
Datasheet download datasheet SLW60R080SS Datasheet

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Full PDF Text Transcription

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SLW60R080SS General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. - 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V This advanced technology has-bLoewegnateeschpaergcei(atyllpyicatal i2l5onrCe)d to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion G D S TO-3P SLW60R080SS 600V N-Channel MOSFET Features - 47A, 600V, RDS(on) typ.
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