Datasheet4U Logo Datasheet4U.com

SLU740UZ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 11A, 430V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD740UZ / SLU740UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL VESD(G-S) Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Puls.

📥 Download Datasheet

Datasheet Details

Part number SLU740UZ
Manufacturer Maple Semiconductor
File Size 363.67 KB
Description N-Channel MOSFET
Datasheet download datasheet SLU740UZ Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SLU301VR High Power Laser Diode with a Datachable Fiber Sony
SLU301XR High Power Laser Diode with a Datachable Fiber Sony
SLU5N65SV 650V N-Channel MOSFE Synmosaic

Other Datasheets by Maple Semiconductor

Part Number Description
SLU70R340SJ N-Channel MOSFET
SLU11N35UZ N-Channel MOSFET
SLU11N40UZ N-Channel MOSFET
SLU2N60UZ N-Channel MOSFET
SLU2N65UZ N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SLD740UZ / SLU740UZ SLD740UZ / SLU740UZ 430V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 11A, 430V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.
Published: |