Datasheet Details
| Part number | SLU11N35UZ |
|---|---|
| Manufacturer | Maple Semiconductor |
| File Size | 945.66 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SLU11N35UZ Datasheet
|
|
|
Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- - 9A, 350V, RDS(on)typ = 0.38Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD11N35UZ / SLU11N35UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed.