Datasheet4U Logo Datasheet4U.com

SLU65R2K6SJ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD65R2K6SJ / SLU65R2K6SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Vol.

📥 Download Datasheet

Datasheet Details

Part number SLU65R2K6SJ
Manufacturer Maple Semiconductor
File Size 627.85 KB
Description N-Channel MOSFET
Datasheet download datasheet SLU65R2K6SJ Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SLU301VR High Power Laser Diode with a Datachable Fiber Sony
SLU301XR High Power Laser Diode with a Datachable Fiber Sony
SLU5N65SV 650V N-Channel MOSFE Synmosaic

Other Datasheets by Maple Semiconductor

Part Number Description
SLU60R2K3SJ N-Channel MOSFET
SLU6N70U N-Channel MOSFET
SLU11N35UZ N-Channel MOSFET
SLU11N40UZ N-Channel MOSFET
SLU2N60UZ N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
SLD65R2K6SJ / SLU65R2K6SJ SLD65R2K6SJ / SLU65R2K6SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 2.3A, 650V, RDS(on) typ. = 2.
Published: |