Datasheet Details
| Part number | SLF60R650SJ |
|---|---|
| Manufacturer | Maple Semiconductor |
| File Size | 766.51 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SLF60R650SJ Datasheet
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Description
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- - 7A, 600V, RDS(on) typ. = 0.58Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R650SJ SLF60R650SJ VDSS ID IDM VGSS Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed Gate-Source Voltage (Note 1) 600 7 7.
- 5 5.
- 10 10.
- ±30.