Datasheet Details
| Part number | MDU06N110 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 933.63 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 MDU06N110 Datasheet
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General Description
The MDU06N110 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDU06N110 is suitable device for Synchronous Rectification For Server and general purpose applications.
Key Features
- VDS = 60V ID = 52A @VGS = 10V RDS(ON) < 11.0 mΩ @VGS = 10V 100% UIL Tested DD DD DD DD D S SSG GS SS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junct.