Datasheet Details
| Part number | MDU10N070RH |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.19 MB |
| Description | N-channel MOSFET |
| Datasheet |
 MDU10N070RH Datasheet
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General Description
The MDU10N070RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDU10N070RH is suitable device for Synchronous Rectification for Server and general purpose applications.
Key Features
- VDS = 100V ID = 53 A @VGS = 10V Very low on-resistance RDS(ON) < 7.4 mΩ @VGS = 10V < 9.1 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5 8 D Pin 5,6,7,8 1 4 4 1 PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC TC=100oC TA=25o.