MT6339N3 - 60V 8A MOSFET

Product Overview

MT Semiconductor

Datasheet Details

Part number	MT6339N3
Manufacturer	MT Semiconductor
File Size	1.25 MB
Description	60V 8A MOSFET
Datasheet	MT6339N3 Datasheet
Additional preview pages of the MT6339N3 datasheet.

Product details

Description

The MT6339N3 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Features

N-channel P-channel VDS (V) = 60V -60V ID = 8A (VGS =10V) -8A (VGS = -10V) G1 RDS(ON) =35m Ω (VGS=10V) =40m Ω (VGS=4.5V) RDS(ON) =64mΩ (VGS = -10V) =75mΩ (VGS = -4.5V) 100% Rg tested DFN3X3-8L D1 D2 G2 S1 S2 Top View S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 60 -60 Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C VGS ±20 ±20 8 -8 ID 8.

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Published: Jul 2, 2025 |