MT3256
Features
- Max RDS(on)=10mΩ at VGS =10V,ID=25A
- Low gate charge(typical 43 n C)
- Low crss(typical 85p F)
- 100% avalanche tested
- Improved dv/dt capability
General Description
These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology.
Applications
- DC-DC Buck Converters
- Notebook battery power management
- Load Switch im Notebook
MOSFET Maximum Ratings TC = 25o C unless otherwise noted
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS ID
Gate to Source Voltage
Drain Curren
- Continuous (Silicon Limited)
- Continuous( Package Limited)
- Continuous
TC = 25o C TC = 25o C TC = 25o C(Note 1a)
- Pulsed
EAS PD TJ, TSTG
Single Pulsed Avalanche Energy
Power Dissipation
- TC = 25o C
- TA = 25o C
Operating and Storage Temperature Range
(Note 3) (Note 1a) (Note 1b)
Ratings 60 ±20 50 28 45 180 10
TO-220=100/TO-252=50 0.9
-55 to +150
Units V V
A m J W W/o C o...
