• Part: MT3250
  • Description: 50V 120A N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: MT Semiconductor
  • Size: 1.06 MB
Download MT3250 Datasheet PDF
MT Semiconductor
MT3250
Features   ‡ R DS(on) =4.8m:(Typ.)@ VGS = 10V, I D =60A ‡ High performance trench technology for extermly low RDS(on) ‡ High power and current handing capability ‡ Ro HS pliant $SSOLFDWLRQV ‡ Power Management in Notebook puter, Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings(TA = 25 unless otherwise noted) G DS TO-220FB-3L Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGSS ID Gate to Source Voltage Drain Current - Continuous (TC = 25o C, Silicon Limited) - Continuous (TC = 100o C, Silicon Limited) - Continuous (TC = 25o C, Package Limited) ±20 2- 9- Drain Current - Pulsed (Note 1)80A Single Pulsed Avalanche Energy Power Dissipation (TC = 25o C) - Derate above 25o C (Note 2) 570m...