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MPQ5850GJ-AEC1 - 36V Smart Diode Controller

Download the MPQ5850GJ-AEC1 datasheet PDF. This datasheet also covers the MPQ5850 variant, as both devices belong to the same 36v smart diode controller family and are provided as variant models within a single manufacturer datasheet.

General Description

The MPQ5850 is a smart diode controller that can drive an external N-channel MOSFET to replace a Schottky diode for reverse input protection.

Key Features

  • Built to Handle Tough Automotive Transients: o -36V Blocking Voltage o Load Dump Up to 42V o Cold Crank Down to 0V o Rectifies AC Frequency Up to 100kHz o Strong Gate Drive Ability: 170mA PullUp and 430mA Pull-Down.
  • Extended Vehicle Battery Life: o Low Quiescent Current in Standby Mode (4μA) o Low Quiescent Current in Steady State (30μA).
  • Reduced Board Size: o Available in a TSOT23-8 (2mmx3mm) Package.
  • Additional Features: o 20mV Ultra-Low Dropout o Integrate.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MPQ5850-MPS.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Monolithic Power Systems

Part Number Description
MPQ5850GJ 36V Smart Diode Controller
MPQ5850 36V Smart Diode Controller
MPQ5872 Smart High-Side Load Switch
MPQ5872GRPE-AEC1 Smart High-Side Load Switch
MPQ5066 Hot-Swap Protection
MPQ5068 Hot-Swap Protection
MPQ5069 Protection Switch
MPQ5072 programmable load switch
MPQ5074 Load Switch
MPQ18811 Single-Channel Gate Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DESCRIPTION The MPQ5850 is a smart diode controller that can drive an external N-channel MOSFET to replace a Schottky diode for reverse input protection. The device’s 20mV ultra-low dropout minimizes power loss and enables a low minimum input voltage, which makes the MPQ5850 well-suited for cold-crank conditions in automotive applications. The 4μA shutdown current also makes the device ideal for batterypowered applications. The ultra-fast transient response meets stringent ISO16750 requirements. The MPQ5850 integrates an internal boost to provide a boost voltage that turns on the external N-channel MOSFET, even at a low input voltage (VIN). An open-drain, power good signal indicates when the external N-channel MOSFET is fully on. The MPQ5850 is available in a TSOT23-8 (2mmx3mm) package.