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RC28F512M29EW - Parallel NOR Flash Embedded Memory

Download the RC28F512M29EW datasheet PDF. This datasheet also covers the RC28F256M29EW variant, as both devices belong to the same parallel nor flash embedded memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features.
  • 2Gb = stacked device (two 1Gb die).
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65.
  • VCC (I/O buffers).
  • Asynchronous random/page read.
  • Page size: 16 words or 32 bytes.
  • Page a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RC28F256M29EW-MICRON.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
RC28F00AM29EW Parallel NOR Flash Embedded Memory
RC28F00AP30BF Micron Parallel NOR Flash Embedded Memory
RC28F00AP30TF Micron Parallel NOR Flash Embedded Memory
RC28F00BM29EW Parallel NOR Flash Embedded Memory
RC28F128M29EWHF Parallel NOR Flash Embedded Memory

Full PDF Text Transcription

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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device (two 1Gb die) • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 25ns – Random access: 100ns (Fortified BGA); 110ns (TSOP) • Buffer program: 512-word program buffer • Program time – 0.88µs per byte (1.
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