RC28F128P30TF65 Datasheet PDF - Numonyx 128-Mbit Single Bit per Cell P30-65nm Flash Memory Specs

RC28F128P30TF65 - 128-Mbit Single Bit per Cell P30-65nm Flash Memory

This page provides the datasheet information for the RC28F128P30TF65, a member of the RC28F640P30BF65 128-Mbit Single Bit per Cell P30-65nm Flash Memory family.

Datasheet Summary

Features

High Performance:.
65ns initial access time for Easy BGA and QUAD+.
75ns initial access time for TSOP.
25ns 8-word asynchronous-page read mode.
52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode.
4-, 8-, 16- and continuous-word options for burst mode.
1.8V Low Power buffered programming at 1.8MByte/s (Typ) using 256-word buffer.
Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using.

Datasheet Details

Part number	RC28F128P30TF65
Manufacturer	Numonyx
File Size	1.05 MB
Description	128-Mbit Single Bit per Cell P30-65nm Flash Memory
Datasheet	RC28F128P30TF65 Datasheet
Additional preview pages of the RC28F128P30TF65 datasheet.

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Full PDF Text Transcription

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Numonyx® Axcell™ P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC) Datasheet Product Features High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and continuous-word options for burst mode — 1.8V Low Power buffered programming at 1.8MByte/s (Typ) using 256-word buffer — Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using 256-word buffer Architecture: — Asymmetrically-blocked architecture — Four 32-KByte parameter blocks: top or bottom configuration — 128-KByte array blocks — Blank Check to verify an erased block Voltage and Power: — VCC (core) voltage: 1.7V – 2.

Published: Dec 18, 2017 |