Datasheet4U Logo Datasheet4U.com

MAPC-A3006-AB - GaN on SiC Transistor

General Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process.

This transistor supports both defense and commercial related applications.

Key Features

  • Saturated Power: 18 W.
  • Drain Efficiency: 70%.
  • Small Signal Gain: 12.5 dB.
  • Lead-Free Air Cavity Ceramic Package.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Other Datasheets by MACOM Technology Solutions

Part Number Description
MAPC-A3006-AS GaN on SiC Transistor
MAPC-A3005-AD GaN on SiC Transistor
MAPC-A3005-AS GaN on SiC Transistor
MAPC-A3007-AB GaN on SiC Transistor
MAPC-A1103 GaN Amplifier
MAPC-A1524 45V GaN Amplifier
MAPC-A2021 GaN Amplifier
MAPS-010164 6-Bit Digital Phase Shifter

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Cavity Ceramic Package • RoHS* Compliant Applications • Avionics - TACAN, DME, IFF • Military Radio • L, S, C-band Radar • Electronic Warfare • ISM • General Amplification Description The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.