Datasheet4U Logo Datasheet4U.com

MAPC-A2021 - GaN Amplifier

General Description

The MAPC-A2021 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for applications 1W average power and optimized for 1.8 - 2.7 GHz modulated signal operation.

The device supports pulsed, and linear operation with peak output power levels to 8 W (39 dBm) in an 4 mm surface mount QFN package.

Key Features

  • MACOM PURE.

📥 Download Datasheet

Other Datasheets by MACOM Technology Solutions

Part Number Description
MAPC-A1103 GaN Amplifier
MAPC-A1524 45V GaN Amplifier
MAPC-A3005-AD GaN on SiC Transistor
MAPC-A3005-AS GaN on SiC Transistor
MAPC-A3006-AB GaN on SiC Transistor
MAPC-A3006-AS GaN on SiC Transistor
MAPC-A3007-AB GaN on SiC Transistor
MAPS-010164 6-Bit Digital Phase Shifter

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaN Amplifier 32 V, 8 W 1.8 - 2.7 GHz Features • MACOM PURE CARBIDE™ Amplifier Series • Optimized for 1.8 - 2.7 GHz Applications • High Terminal Impedances for Broadband Performance • 26 - 32 V Operation • Low Thermal Resistance • 100% RF Tested • RoHS* Compliant Applications • 5G Cellular Networks • Tri-band Small Cells Description The MAPC-A2021 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for applications 1W average power and optimized for 1.8 - 2.7 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 8 W (39 dBm) in an 4 mm surface mount QFN package. Typical Circuit Performance: • WCDMA 3GPP TM1, 10 dB PAR @ 0.01% CCDF.