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LFUSCD20120B - SiC Schottky Diode

Description

The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.

The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features

  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Enhanced surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes Circuit Diagram Case 4 12 3 4.

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Full PDF Text Transcription

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SiC Schottky Diode LFUSCD20120B, 1200 V, 20 A, TO-247 3-lead LFUSCD20120B RoHS Pb Description The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
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