Datasheet4U Logo Datasheet4U.com

LFUSCD04065A - 4A 650V SiC Schottky Diode

Description

The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.

The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features

  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Enhanced surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LFUBK909XA LCD Module Sangise
LFUBL6 LCD Module Alps
LFUBL605XA LCD Module Alps

Other Datasheets by Littelfuse

Part Number Description
LFUSCD20120B SiC Schottky Diode

Full PDF Text Transcription

Click to expand full text
SiC Schottky Diode LFUSCD04065A, 650 V, 4 A, TO-220 2-lead LFUSCD04065A Circuit Diagram 1 Case 1 2 RoHS Pb Description The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Published: |