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L2SA1365GLT1G - General Purpose Transistor

Download the L2SA1365GLT1G datasheet PDF. This datasheet also covers the L2SA1365ELT1G variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

Description

L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).

Small collector to emitter saturation voltage.

Excellent linearity of DC forward current gain.

Super mini package for easy mounting

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (L2SA1365ELT1G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number L2SA1365GLT1G
Manufacturer Leshan Radio Company
File Size 677.20 KB
Description General Purpose Transistor
Datasheet download datasheet L2SA1365GLT1G Datasheet

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Other Datasheets by Leshan Radio Company

Part Number Description
L2SA1365GLT3G General Purpose Transistor
L2SA1365ELT1G General Purpose Transistor
L2SA1365ELT3G General Purpose Transistor
L2SA1365FLT1G General Purpose Transistor
L2SA1365FLT3G General Purpose Transistor

Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of product compliance with RoHS requirements. ●We declare that the material of product is ROHS compliant ●S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.
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