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LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of product compliance with RoHS requirements. ●We declare that the material of product is ROHS compliant ●S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.
L2SA1365ELT1G Datasheet
