LMP2165X5F
Features
- -20V/-1.5A, RDS(ON) =70mΩ@VGS = -4.5V
- -20V/-1.2A, RDS(ON) =90mΩ@VGS = -2.5V
- -20V/-0.8A, RDS(ON) =130mΩ@VGS = -1.8V
- Super high density cell design for extremely low
RDS (ON)
- Exceptional on-resistance and maximum DC current capability
These devices are particularly suited for low Voltage power management, such as smart Phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Product Description
LMP2165, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Applications
- Portable Equipment
- Battery Powered System
- Net Working System
Pin Configuration LMP2165X5F (SOT-323)
Top Views
Pin
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMP2165X5F
P/N...
